Abstract
InN thin films, which are less studied III-V compound semiconductors, are prepared by a rf excited reactive evaporation method on glass or semi-insulating GaAs (100) substrates. The deposition conditions of the films are discussed and structures and electrical and optical properties of them are investigated. Relatively high mobility is obtained when the substrate temperature is high and the nitrogen gas pressure is low. On the other hand, relatively low carrier density is obtained when the substrate temperature is low and the nitrogen gas pressure is high. Color of the InN thin film is dark red and its band gap energy is 1.92 eV. Crystallinity of the InN thin films are improved by using the GaAs substrates.
