Journal of the Society of Materials Engineering for Resources of Japan
Online ISSN : 1884-6610
Print ISSN : 0919-9853
ISSN-L : 0919-9853
Structure and electrical properties of hydrogenated amorphous silicon carbide prepared by plasma CVD method
Akimori TABATAKenji TOMIITAYasuo SUZUOKITeruyoshi MIZUTANI
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1991 Volume 4 Issue 2 Pages 35-45

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Abstract
The XPS and AC conductivities of a-SixC1-x: H films prepared by the plasma CVD method from silane and methane gases were measured. The separation of the XPS spectra into several peaks revealed the nature of the chemical bonds of silicon and carbon atoms. The coordination of the carbon atom was fourfold in the silicon-rich films, while the threefold coordination was dominant in carbon-rich films. Films prepared from hydrogen-diluted gas contained more carbon atoms with fourfold coordination than those prepared from argon-diluted gas. AC conductivities of the films with silicon content 0.7<x<0.9 were explained in terms of the correlated barrier hopping (CBH) model, the densities of hopping sites were estimsted to be 1017-1018cm-3. AC conductances of the films with x>0.9 above 300K were discussed in terms of the trap-released model. The densities of states at the Fermi level were estimsted at-1016cm-3eV-3 and the Fermi level was in the midgap.
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