Abstract
The (111) thin films prepared from a bulk crystal of Al (99.99% in purity) were heated isothermally at 873K and cyclically between 873 and 773K with aperiod of 0.90 and 1.80ks in a transmission electron microscope, and the behaviorof dislocations was observed directly. During raising of the specimentemperature many dislocations were annihilated from the films except for thosewhich composed three types of sub-boundaries: that is, a dislocation array, alineage defect and a dislocation bundle. No change was observed in the configurationof those sub-boundaries under the iso-thermal heating. Under the thermalcyclic heating, on the contrary, some dislocations composing the dislocationarray slipped away, as foreign dislocations came near and reacted with the dislocationarray. However, morphology of the lineage defect and the dislocationbundle showed little change even under the thermal cyclic heating.
