Abstract
Numerical calculation of submicron silicon MOSFET and surrounding region is performed. Conjugate nature of the thermal and electrical behavior in the device is considered, and the lattice temperature is solved as well as the electron concentration and the electron temperature. The calculated results show the importance of considering both the electron and lattice temperatures for device modeling; the electron temperature has a significant impact on the calculated electron concentration and the lattice temperature. Furthermore, by extending analysis region, we examine the influence of the computational boundary and the neighboring devices. We discuss the conjugate nature of the thermal and electrical behavior of actual silicon devices for modeling.
