Abstract
By the development of micro-fabrication technology, much smaller-size electronic devices will be soon available. In such a smaller device, non-equilibrium state might be appeared for careers in metal and/or semiconductor which composes the device. In such a situation, the device performance estimation by the macroscopic transport equations that assume quasi-equilibrium distribution is difficult. Then we are developing a numerical code based on Boltzman transport equation (BTE), which can analyze thermal and electric phenomena even when the state is far from equilibrium. In this presentation, we show the numerical method of BTE for free electron in metal and the calculation result of thermopower and heat flow.
