Abstract
Nano-Forcused Ion Beam (FIB) were studied with molecular dynamics simulation. The target substrate was Silicon crystal (100). Firstly, we choose small computational volume as evaluation of combination of potential function for Si and Ga ion. The combination of Tersoff potential for Si and Ziegler, Biersack and Littmark (ZBL) potential for Ga ion is determined from result of the simulations. Secondly, large-scale molecular dynamics simulations were performed by the combination of the potential. Ga ions from 9 to 100 number impact on Si (100) with an irradiation area. When numbers of Ga ion is small, the sputtering Si atoms cause nearest-neighbors impacting Ga ions. On the other hand, in case of increasing of Ga ion, the sputtering Si atoms are pushed away from between Ga ion and Ga ion.
