Abstract
The results of electro-thermal analysis is strongly depended on the mesh size. However the appropriate mesh size or mesh zoning method were not reported. In the present work, we propose the mesh zoning method for electro-thermal analysis of Si MOSFET, which is derived from the theory of semiconductor physics. The calculation results show the results with zoned mesh have a good agreement with that with fine mesh. Mesh number can be reduced by using zoning method. As a result, our mesh zoning method can reduce the calculation time by at least 30 times.
