Abstract
Silicon quantum dots (Si QDs) are expected to be high-value added materials for the next generation of devices due to their size dependent optical and electronic properties. We have developed a new synthesis method of Si QDs by using in-flight plasma CVD operated at relatively high pressure, and succeeded in continuous gas phase synthesis of free-standing Si QDs with mean diameter of less than 10 nm. The yield of Si QDs was evaluated in various synthesis conditions and it depends on the specific energy imput (SEL, J/cm^<-3>). From the results of gas analysis and estimation of yield loss on reactor wall, it was revealed that the yields of Si QDs are decided by the balance between SiCl_4 conversion and loss to the reactor wall.
