Abstract
In this study, the reaction mechanism and growth rate of TiN film by thermal Chemical Vapor Deposition(CVD) has been investigated. A horizontal tubular reactor was used for coating of the TiN film. the growth rate increased rapidly near the reactor inlet and then it decreased exponentially along an axial position of the reactor. Although the growth rate increased with the total gas flow rate and the setting temperature, a configuration of the growth rate distribution along the axial position in the reactor didn't change. From these experimental results, it was suggested that the coating progressed successively from gas phase reaction to surface reaction.
