Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 22, 2016 - October 23, 2016
This paper describes comparison of temperature distribution between Si and 4H-SiC power MOSFET (Metal–Oxide-Semiconductor Field-Effect Transistor). In this paper, Electro-Thermal Analysis was employed for calculation of Si and 4H-SiC power MOSFET. Recently, SiC device has attracted attention as high power and high temperature power device. However, thermal properties of SiC power MOSFET are not clear. Therefore, in this study, hot spot temperature and average temperature of Si and SiC power MOSFET under various drain voltages are compared. From this result, the thermal properties are not same, and hot spot temperature of 4H-SiC power MOSFET is lower than Si power MOSFET in the case that both power MOSFETs have same structure.
