Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 20, 2018 - October 21, 2018
W We have conducted a deposition experiment of SiO2 film in HMDSO - O2 - N2 system using thermal CVD method. The effects of deposition temperature, material concentration, operating pressure and O2 concentration on growth rate distribution were investigated. In the surface reaction controlled region, the film growth rate distribution continuous in the flow direction was evaluated by using a differential reactor, and created Arrhenius plot. It was found that it was represented by one correlation line regardless of the change of the experimental conditions. In addition, the activation energy was 221 kJ/mol. (9 point, about 100 words)102 words
