The Proceedings of the Thermal Engineering Conference
Online ISSN : 2424-290X
2021
Session ID : 0133
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Characterization of non-stoichiometric nickel oxide thin films as a hole transport layer
*Ippei MatsuoShuhei InoueYukihiko Matsumura
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Abstract

A hole transport layer is one of the main components of a solar cell. It is inserted between the electrode and the storage layer to enable selective charge extraction and to suppress charge recombination at the interface. Nickel oxide is expected to be an inorganic hole transport material with good performance because it has good chemical stability and behaves as a p-type semiconductor in non-stoichiometric compositions. In this study, nickel(II) oxide thin films with non-stoichiometric composition were prepared by controlling the oxygen partial pressure during film deposition using reactive magnetron sputtering, and their properties as hole transport layers were investigated.

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© 2021 The Japan Society of Mechanical Engineers
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