2006 Volume 55 Issue 8 Pages 785-789
The oxidation behavior of an aluminum nitride (AlN) thin film, fabricated by reactive DC magnetron sputtering using aluminum metal as a target material was examined. The obtained AlN film was transparent with a flat surface. An annealing test was carried out for the AlN film at 1000°C in air. The oxidation product was identified as γ-Al2O3 by Rutherford backscattering composition and X-ray diffraction analyses. Transmission electron microscopy showed a polycrystalline Al2O3 film with a grain size of several tens of nm. It was confirmed that the interface of AlN film and silicon substrate was protected from oxidation although the Al2O3 layer thickness increased during the oxidation.