Journal of the Society of Materials Science, Japan
Online ISSN : 1880-7488
Print ISSN : 0514-5163
ISSN-L : 0514-5163
Original Papers
Polarization Analysis of Ga1-xAlxN and Zn1-xMgxO by First-Principles Calculation
Kazuto KOIKETakahiro AOKISyun IIDAYasuhito FUKUTAYasutomo UETSUJIShigehiko SASAMasataka INOUEMitsuaki YANO
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2010 Volume 59 Issue 9 Pages 660-665

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Abstract
Physical parameters of Ga1-xAlxN and Zn1-xMgxO wurtzite crystals (x = 0 and 0.5) were analyzed using first-principles calculation. A plane-wave pseudopotential method was employed to a density functional theory, and the effect of alloying on the lattice parameters, spontaneous polarization in the c-axis direction, elastic stiffness and piezoelectric stress constants were calculated. Polarization effect in the heterosystems of Zn-polar Zn0.5Mg0.5O/ZnO and O-polar ZnO/Zn0.5Mg0.5O as well as Ga-polar Ga0.5Al0.5N/GaN and N-polar GaN/Ga0.5Al0.5N was compared by estimating their interface charges. The interface charges of the former two systems were estimated to be ∼5 times larger than those of the latter two assuming the strained structures by pseudomorphic growth.
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© 2010 by The Society of Materials Science, Japan
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