Abstract
AlOx thin film is one of the most promising high dielectric constant (High-k) materials. AlOx thin films were grown by mist CVD using a solution-based fabrication technology operated even under atmospheric pressure. This method is highly suitable due to easy configuration, low cost and environmental friendly operations. This report demonstrates significant improvements in the quality of AlOx thin films by O3 incorporation. AlOx thin films were grown above 400°C with breakdown field (EBD) over 6 MV/cm, static dielectric constant (κ0) over 6, and dynamic dielectric constant (κ∞) around 3. On the other hand, O3 assisted AlOx thin films were grown above 340°C with EBD over 8MV/cm, κ0 over 7, and κ∞ over 3. This work demonstrates that the quality of AlOx thin films could be significantly improved using O3 incorporation. AlOx thin film properties and its degradations were controlled by the OH(-AlOx) residual bonding. High quality AlOx thin films were grown at the temperature range from 400°C to 340°C by controlling OH(-AlOx) bonding decomposition with O3 incorporation.
