2016 Volume 65 Issue 9 Pages 638-641
Recently, BaSnO3 is attracting great attention as one of the promising oxide semiconductors with large bandgap (3.1 eV) and high mobility. The lattice constant and the band gap of this material can be tuned by changing the A site ion to Sr and Ca that should be an advantage if it is stacked to other oxide films with perovskite structure. In this paper, the growth and the characterization of (Ba,La)SnO3 thin films on (111) SrTiO3 substrate by pulsed laser deposition method are described. The effect of the O2 gas pressure on the stoichiometry, crystallinity and the deposition rate of film are investigated. Eventually (111) (Ba,La)SnO3 epitaxial film with the electron concentration of 2.2×1019 cm-3 and the hall mobility of 22.5 cm2V-1s-1 was successfully obtained.
