Journal of the Society of Materials Science, Japan
Online ISSN : 1880-7488
Print ISSN : 0514-5163
ISSN-L : 0514-5163
Lecture
Recent Advancement of Semiconductor Materials and Devices
II: Molecular Beam Epitaxial Growth and Device Application Using This Growth Method
Yoriko TOMINAGA
Author information
Keywords: Molecular beam epitaxy, Compound semiconductors, Optical and electronic devices
JOURNAL FREE ACCESS

2017 Volume 66 Issue 2 Pages 185-191

Details
Download PDF (2029K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Article 1st page
Content from these authors
© 2017 by The Society of Materials Science, Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Predecessor

journal of the Japan Society for Testing Materials

Share this page
feedback
 Top