Sublattice Reversal Epitaxy on High-Index Substrates for Novel Planar-Type Nonlinear Optical Devices

Abstract

Sublattice reversal has been successfully demonstrated in GaAs-based III-V semiconductors on high-index substrates. A thin layer of Ge was introduced as a group IV material during molecular beam epitaxy of GaAs or AlAs layers on the (113)B- or (113)A-oriented GaAs substrates. The sublattice reversal was realized over the entire wafer area when GaAs/Ga/AlAs system was deposited on the (113)B substrate while it was not realized on the (113)A substrate. On the other hand, the sublattice reversal was completely realized for AlAs/Ga/AlAs system on the (113)A substrate and not on the (113)B substrate. These situations may be explained by self-annihilation of antiphase domains whose boundaries are composed of inclined (111) bond planes. The growth technology of the sublattice reversal epitaxy can be applied to novel kinds of planar-type nonlinear optical devices, which require a polarization-inverted structure in order to satisfy the quasi-phase-matching condition for the second-order nonlinear signal. Here, we will discuss on surface-emitting terahertz devices based on a semiconductor coupled multilayer cavity.