2021 Volume 70 Issue 10 Pages 745-750
We discussed on crystallization and crystal length control of fullerene(C60) by mist vapor deposition method and fabrication of n-type organic transistor. It was revealed that these crystallinities were affected by the substrate temperature and the amount of mist supplied. The n-type organic transistors using fullerene crystal were able to operate in the atmospheric condition. The electron mobility was estimated to be 7.36×10-6 [cm2/Vs]. Furthermore, the transistor characteristics have been improved by applying HMDS treatment and annealing processing. In particular, the HMDS treatment caused crystals to precipitate between the source and drain electrodes.