Journal of the Society of Materials Science, Japan
Online ISSN : 1880-7488
Print ISSN : 0514-5163
ISSN-L : 0514-5163
Lecture
Electronic Materials Accelerating the Development of Ubiquitous Devices
II: Crystal Growth and Characterization of Nitride Semiconductors on ScAlMgO4 Substrates using RF-MBE
Tsutomu ARAKI, Momoko DEURA, Takashi FUJII
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Keywords: GaN, ScAlMgO4, RF-MBE, TEM, XRD
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2023 Volume 72 Issue 9 Pages 689-694

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