Abstract
The Thin Wafer method for determining the dynamic stress-strain relation of materials has been examined on the basis of wave propagation in a specimen. The analysis was done for an elastic-plastic rate independent material and rate dependent elastic-viscoplastic or elastic-viscoplastic-plastic materials.
Stress history at both ends of the specimen was taken as a measure of uniformity in the deformation of the specimen. The stress-strain curves obtained from the conventional Thin Wafer method were compared with those calculated from the average strain rate by the constitutive equations.
It is concluded that the Thin Wafer method is a valid means for obtaining the stress-strain relation of materials at high strain rates.
