Abstract
The deformation properties of β-silicon nitride under shear loading are investigated by molecular dynamics simulation using a three body empirical potential. Two cases of shear deformation, {1010} ‹0001› and {1010} ‹1210›, are analyzed, which are reported as the slip systems on the basis of experimental observation. The ideal shear strength of the β single crystal along these directions is somewhat smaller than the one of α-silicon nitride single crystal reported previously. Slip deformations take place in narrow bands, thickness of which are very thin. For the {1010} ‹0001› case, itis almost equal to the distance between the nearest neighbor atoms and for the {1010} ‹1210› case about 0.4nm.
