Abstract
The epitaxial growth of Si on Si(001) substrate, under specific conditions, produces three-dimensional islands in nano-meter order which is expected to serve as a texture to realize various functions. This paper aims to align the islands using the mesa structure with specific pattern on the substrate produced in advance. Firstly, the relationship between the mesa structure and arrangement regularity of islands was made clear based on experiments. Typical arrangement is that the islands with 50nm height and 200∼300nm diameter aligned in line in the center of mesa. Secondary, the non-uniform epitaxial growth near the mesa was modeled and general guideline to obtain specific pattern was made clear.
