Abstract
This study focuses on the deposition of higher density a-C films by sputtering enhanced by electron beam excited plasma. Energies and densities of Ar ions and electrons in plasma were controlled by changing the deposition conditions such as target-substrate distance, the target bias voltage, pressure in the chamber and discharge voltage between the cathode and the anode. As a result, a-C films with different densities ranging from 1.7 to 3.1 g/cm3 were synthesized. XPS analysis indicated that the ratio of sp3 bonding was higher in the a-C film with the density of 3.1 g/cm3 than that of 1.7 g/cm3. The difference of surface profiles was not observed from the a-C films with various densities, however, the friction test revealed that the frictional property of a-C films depends on the density of a-C films.
