Abstract
This paper describes PBII (Plasma-Based Ion Implantation). In PBII a target material is immersed in a plasma and pulsed high voltage with a negative polarity is directly applied to the target with three-dimensional shapes for realizing uniform ion implantation. Gaseous and non-gaseous plasmas are employed. When the pulsed voltage is applied to the target material, an ion sheath is formed around the target material and ions are implanted into the target material. The ion motion is described using the Child-Langmuir theory. The conditions for conformal ion implantation into the target material are discussed in terms of time evolution of the sheath expansion into the plasma. Pulsed plasma is seen as a method to establish conformal implantation. Finally, the application of PBII is described.
