Present and Future of Semiconductor Pulsed Power Generator ˜Role of Power Semiconductor Devices in Plasma Research˜ 6.High-Speed, Large-Current Power Semiconductors for Pulse Power Generation

Abstract

This paper describes the operation principles and limits of power semiconductors. In addition, operation mechanisms of the new pulse power devices, SOS (Semiconductor Opening Switch) and dynistors, are explained qualitatively. The fastest operating power device is the series connection of comparatively low-voltage devices. For large-current operation, a uniformly operating pin-diode structure device is essential. An SOS is constructed from dozens of medium voltage (about 3kV) special hard-recovery diodes. This can shut off 2kA current at 10kV with in 10ns. The dynistor has n⁺pnp⁺ four layers and two electrodes. Serial-connected dynistors have the potential to replace thyratrons. These new devices can endure over 10 kA/cm² at much higher voltage than their static breakdown values in the repetitive use more than 10¹¹ times.