Abstract
The plasma-enhanced chemical vapor deposition method, which has such benefits as low synthesis temperature and vertical alignment control, was successfully applied to the single-walled carbon nanotube (SWNT) formation stage. By means of plasma sheath effects, the individual SWNT with a freestanding form was grown on a silicon-based flat substrate surface. The detailed plasma effects are also discussed in order to achieve more precise control of the growth of the carbon nanotube.