Zinc oxide thin films were synthesized on glass substrates using a combination of a metalorganic pulsed molecular beam and an oxygen-radical beam. At temperature between 120 oC and 430 oC, zinc oxide (ZnO) thin films were deposited only when an oxygen-radical beam was irradiated along with DMZ (dimethyl zinc: Zn(CH3)2). The reaction products, CO, CO2 and CH4 were detected while depositing ZnO films.
