Abstract
Growth characteristics of GaAs and InAs nanowhiskers formed by using the vapor-liquid-solid growth method during metal organic vapor-phase epitaxy are reviewed. The nanowhiskers grown along the <111>B crystallographic orientation were as thin as 10-500 nanometers and up to 5 micrometers long. The width of grown nanowhiskers was dependent on the growth temperature and the thickness of Au deposit used as a growth catalyst. The minimum width of the nanowhiskers was estimated to be about several nanometers, which is a growth limit predicted by the Gibbs-Thomson effect. Current-voltage characteristics of selectively grown Si-doped GaAs nanowhiskers were measured. A step-like current change as large as 0.5 microamperes was reproducibly observed on the background current-voltage curve of between 0 and 1.0 microamperes, suggesting that carrier trap levels on the whisker surface might be involved in the change.
