Abstract
We developed a novel method to enhance the light emission efficiencies from solid-state materials by use of surface plasmon (SP). We obtained a 17-fold increase in the luminescence intensity along with a 7-fold increase in the internal quantum efficiency of light emission from InGaN/GaN quantum wells (QWs) when nano-structured silver layers were deposited 10 nm above the QWs. We also observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN at 440 nm probed by time-resolved PL measurements. Electron-hole pairs in the materials couple to electron vibrations at the metal surface and produce SPs instead of photons or phonons. This new path increases the spontaneous emission rate and the internal quantum efficiencies. The SP-emitter coupling technique would lead to super bright and high-speed solid-state light-emitting devices that offer realistic alternatives to conventional fluorescent light sources.
