Characterization of CVD Grown Multi-layer Graphene by Microscopic Raman Spectroscopy and Bulk-sensitive XPS

Abstract

In order to grow multi-layer graphene for LSI interconnection at the low temperature without any catalyst, the growth temperature dependence of multi-layer graphene formed by photoelectron-assisted plasma chemical vapor deposition is investigated using microscopic Raman spectroscopy and bulk-sensitive X-ray photoelectron spectroscopy. The samples were grown at the temperatures from room temperature (RT) to 700^oC by using an Ar/CH₄ gas mixture on a Si(001) substrate with native oxide. At temperatures as high as 700^oC, shiny black films are obtained, suggesting the growth of graphite. From G band position and FWHM in Raman spectra, it is found that the abundance of graphene sheet is considerably reduced when the growth temperature is lowered below 500^oC, leading to an increase of amorphous. This tendency is in accordance with the temperature dependence of the ratio between amorphous graphene components in C 1s spectra.