Hyomen Kagaku
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
Reviews
Formation, Atomic Structures, and Physical Properties of Si-SiO2 System
Takeo HATTORIKazuyuki HIROSE
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2010 Volume 31 Issue 1 Pages 30-34

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Abstract

This article summarizes recent progress and current scientific understanding of atomic and/or electronic structures of ultrathin SiO2 films and/or its interface with Si substrates in addition to the review of scientific achievements done in the past 30 years.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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