Influence of Thickness of the Buffer Layer on the Growth of Carbon Nanotubes by Chemical Vapor Deposition Method

Abstract

We have investigated influence of thickness of the Cr buffer layer on the glass substrate in the growth process of carbon nanotubes (CNTs) by chemical vapor deposition method. The Cr film of 3, 35 or 100 nm as a buffer layer was formed on a glass substrate by RF-sputtering method. A catalyst such as Fe, Co, or Ni in the CNT growth was also deposited on the buffer layers. The Cr buffer layer with a catalyst and the CNTs grown on the surfaces were observed by scanning electron microscopy. The lengths and the densities of the CNTs grown on the surfaces decreased with the increase in thickness of the Cr buffer layers.