金属クラスター錯体イオンビームの特性と二次イオン質量分析（SIMS）への応用

藤原 幸雄; 野中 秀彦; 齋藤 直昭; 鈴木 淳; 井藤 浩志; 藤本 俊幸; 黒河 明; 一村 信吾; 富田 充裕

doi:10.1380/jsssj.31.593

Special Issue on Cluster Beam—Technology and Application

Characteristics of a Metal-Cluster-Complex Ion Beam and Its Application to Secondary Ion Mass Spectrometry (SIMS)

Yukio FUJIWARA, Hidehiko NONAKA, Naoaki SAITO, Atsushi SUZUKI, Hiroshi ITOH, Toshiyuki FUJIMOTO, Akira KUROKAWA, Shingo ICHIMURA, Mitsuhiro TOMITA

Author information

Yukio FUJIWARA
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Hidehiko NONAKA
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Naoaki SAITO
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Atsushi SUZUKI
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Hiroshi ITOH
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Toshiyuki FUJIMOTO
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Akira KUROKAWA
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Shingo ICHIMURA
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
Mitsuhiro TOMITA
Corporate Research and Development Center, Toshiba Corporation

Keywords: metal cluster complex, Ir₄(CO)₁₂, sputtering, SIMS, depth profiling

JOURNAL FREE ACCESS

2010 Volume 31 Issue 11 Pages 593-598

DOI https://doi.org/10.1380/jsssj.31.593

Details

Abstract

Metal cluster complexes are chemically-synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal-cluster-complex ion source, sputtering characteristics of a silicon substrate bombarded with normally incident Ir₄(CO)₇⁺ ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar⁺ ions by a factor of 24. Further, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly (methyl methacrylate) (PMMA) was performed. Using the Ir₄(CO)₇⁺ ion beam, the depth resolution of 0.9 nm was obtained at 5keV, 45^o with oxygen flooding of 1.3×10⁻⁴ Pa. Additionally, it was confirmed that Ir₄(CO)₇⁺ ion beams significantly enhanced secondary ion intensity in high-mass range.

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