Depth Profiling of Multilayered Si/Ti by Resonance-enhanced Multiphoton Ionization SNMS

Abstract

Depth profiling of multilayered Si/Ti samples using resonance-enhanced multiphoton ionization-sputtered neutral mass spectrometry (REMPI-SNMS) has been compared with that using SIMS to study matrix effects of REMPI-SNMS. We have discussed matrix effects at interface and in the Ti bulk containing oxygen by using Ar⁺ and O₂⁺ beam as primary ion beam. It is found that the matrix effect at the interface for REMPI-SNMS has been negligible small. On the other hand, the result of REMPI-SNMS measurement has been affected by oxygen in the bulk due to the drastically change of secondary ion yield. We suggest that SIMS/SNMS depth profiles with different primary ions are useful to understand matrix effects.