Hyomen Kagaku
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
Special Issue: Interfacial Electronic Property in π-System Organic Solids
Phase-transition Transistor Based on an Organic Mott-insulator Interface
Hiroshi YAMAMOTO
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2011 Volume 32 Issue 1 Pages 33-38

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Abstract
This paper describes a band-filling-controlled Mott transition at an interface of an organic field effect transistor. Conductance and Hall coefficient of a thin crystal of an organic Mott-insulator laminated onto a SiO2/Si substrate were measured under various gate electric fields at low temperature. The maximum field effect mobility of this device reached 94 cm2/Vs. The carrier density at finite positive gate voltages corresponds to that of a metallic state of this material, rather than that of a Mott-insulating state. This observation indicates the electric-field induced Mott transition in the interface.
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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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