Formation of Graphene on the SiO₂ Surfaces by SiC Surface Decomposition Method

Abstract

We have investigated the formation of graphene on the SiO₂/Si (111) surfaces using scanning tunneling microscopy. When the SiC (111) film [1500 nm] formed on the SiO₂ surfaces was annealed at 980^oC, graphene layer was obtained on the SiC surface. When the thickness of the SiC film was 5 nm, the graphene was not observed. However, graphene layer was obtained on the SiO₂ surfaces after annealing the C-covered SiC (111) [5 nm] film on the SiO₂/Si (111) surfaces at 980^oC.