Abstract
Fusion of graphene with the substrates adequate for device applications is effective to solve the Year 2020 problem in electronics. Epitaxy of graphene on Si substrate (GOS) has been developed because the choice of Si as the substrate brings two merits, excellent electronic properties of graphene and accumulated device technologies of Si. It is found that electronic properties of GOS can be tuned by substrate interaction through surface termination as well as surface symmetry whose importance has been pointed by the author. Furthermore, epitaxy of GOS on microfabricated substrates has been developed because the GOS technology is to be conformed with future device integrations. GOS on microfabricated substrates with various facets will enable to produce nanoscale multifunctionalization by using the single material, graphene.
