Hyomen Kagaku
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
Special Issue: Surface and Interface Science for Advanced Gate Stack Technology
Gate Stack Technology
Hiroshi IWAIKuniyuki KAKUSHIMATakamasa KAWANAGO
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Keywords: MOSFET, gate, stack, oxide, metal
JOURNAL FREE ACCESS

2012 Volume 33 Issue 11 Pages 600-609

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Abstract

MOSFET is a key component for integrated circuits which controls and helps the human activities in modern society. The demands for high performance and low power MOSFETs become stronger and stronger with the progress of smart society. Gate stack is the most critical element of the MOSFETs which controls its operation. In this report, after the explanation of the overall basics of the gate stack technology, recent status of the gate stack R & D are reviewed, focusing on that for high-k/metal gate stack.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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