Hyomen Kagaku
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
Special Issue: Surface and Interface Science for Advanced Gate Stack Technology
Unique Properties of Diamond and Its Device Applications
―Negative Electron Affinity and Electron-emission PN Diode―
Satoshi YAMASAKIDaisuke TAKEUCHIHideyo OKUSHIToshiharu MAKINOMasahiko OGURAHiromitu KATO
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JOURNAL FREE ACCESS

2012 Volume 33 Issue 11 Pages 634-638

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Abstract

Diamond is a new semiconductor which has been developed in the last around 15 years. It has unique properties and the potential of unique electronic devices. The typical example is negative electron affinity (NEA) for hydrogen terminated diamond surface. The nature of diamond electron affinity was investigated using by photo-yield spectroscopy (TPYS). Using the NEA property, electron emission p-n (p-i-n) diodes were fabricated, and this diode can be used as a new principle power device; a vacuum micro switch operated by a p-n diode.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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