Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds

Abstract

Ge(GeC_x) and SiC(SiCGe_x) nanodots were formed on Si(001)2^o off substrates after the formation of Si c(4×4) structure using monomethylgermane (MMGe). Surface structure of the Ge(GeC_x) and SiC(SiCGe_x) nanodots was measured by scanning tunneling microscopy (STM). From the quantitative analysis of X-ray photoelectron spectroscopy (XPS), it was estimated that the Ge(GeC_x) and SiC(SiCGe_x) nanodots existed in the ratio of about 1 : 2.4. SiC capping layer was formed on the Ge(GeC_x), SiC(SiCGe_x) nanodots generated at 550∼650^oC using monomethylsilane (MMSi). Photoluminescence (PL) spectra from the SiC/Ge (GeC_x), SiC(SiCGe_x) dots/SiC_x stacked structure were also measured.