Electronics of Compound Materials Nanosheets

Abstract

We present a review on the electronic applications of compound materials nanosheets as semiconductor channel materials. Also, we report our results about the device fabrication and characterization of high-k/metal gate MoS₂ metal-oxide-semiconductor field-effect transistors (MOSFETs). To investigate the scattering mechanism to be responsible for the mobility of MoS₂ MOSFETs, the effective mobility has been estimated from the capacitance-voltage and current-voltage characteristics of top-gated MoS₂ MOSFET with HfO₂/TaN gate. Phonon-limited carrier transport probably limited the mobility of the MoS₂ device exhibiting the better mobility. In contrast, the transport characteristics of the MoS₂ device exhibiting the lower mobility was dominated by charged impurity scattering in MoS₂.