A FAB Source for SIMS Studies of a Focused FAB Source

Kazutoshi NAGAI

doi:10.1380/jsssj.10.35

A FAB Source for SIMS

Studies of a Focused FAB Source

Kazutoshi NAGAI

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JOURNAL FREE ACCESS

1989 Volume 10 Issue 1 Pages 35-39

DOI https://doi.org/10.1380/jsssj.10.35

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Published: February 01, 1989 Received: October 27, 1988 Available on J-STAGE: August 07, 2009 Accepted: October 27, 1988 Advance online publication: - Revised: -
Correction information
Date of correction: August 07, 2009 Reason for correction: - Correction: ABSTRACT Details: Wrong : A focused fast atom beam source (Focused FAB Source) has been developed by combination of a focused ion source and an ion neutralizer. The source, which consists of a Ga liquid metal ion source, an electro-static lens and a beam scanner, emitts a Ga ion beam of 10 im in the spot size which is measured through observation of absorption current images of a Mo mesh. The focused ion beam, which passes through the low energy electron cloud generated in the ion neutralizer, is changed into a focused atom beam by recombination with electrons. The focused FAB source emitts a Ga atom beam with 7-13 keV of kinetic energy, 30 pA of beam current, and 10 μm of beam diameter. The neutralization coefficient of the ion neutralizer is estimated through intensity ratios for secondary ions by constructing a FAB-SIMS with the focused FAB source and a quadrupole mass spectrometer. It increases with the filament current and bias voltage for the ion neutralizer and saturates at 10%.
Right : A focused fast atom beam source (Focused FAB Source) has been developed by combination of a focused ion source and an ion neutralizer. The source, which consists of a Ga liquid metal ion source, an electro-static lens and a beam scanner, emitts a Ga ion beam of 10 im in the spot size which is measured through observation of absorption current images of a Mo mesh. The focused ion beam, which passes through the low energy electron cloud generated in the ion neutralizer, is changed into a focused atom beam by recombination with electrons. The focused FAB source emitts a Ga atom beam with 7-13 keV of kinetic energy, 30 pA of beam current, and 10 μm of beam diameter. The neutralization coefficient of the ion neutralizer is estimated through intensity ratios for secondary ions by constructing a FAB-SIMS with the focused FAB source and a quadrupole mass spectrometer. It increases with the filament current and bias voltage for the ion neutralizer and saturates at 10%.

Abstract

A focused fast atom beam source (Focused FAB Source) has been developed by combination of a focused ion source and an ion neutralizer. The source, which consists of a Ga liquid metal ion source, an electro-static lens and a beam scanner, emitts a Ga ion beam of 10 im in the spot size which is measured through observation of absorption current images of a Mo mesh. The focused ion beam, which passes through the low energy electron cloud generated in the ion neutralizer, is changed into a focused atom beam by recombination with electrons. The focused FAB source emitts a Ga atom beam with 7-13 keV of kinetic energy, 30 pA of beam current, and 10 μm of beam diameter. The neutralization coefficient of the ion neutralizer is estimated through intensity ratios for secondary ions by constructing a FAB-SIMS with the focused FAB source and a quadrupole mass spectrometer. It increases with the filament current and bias voltage for the ion neutralizer and saturates at 10%.

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