STM Observation of (NH4)2Sx-treated GaAs (100) Surface

Masamichi YOSHIMURA; Ryu SHIOTA; Akihiko KUROKI; Norihiko ARA; Masami KAGESHIMA; Hidemi SHIGEKAWA; Haruhiro OIGAWA; Yasuo NANNICHI; Yoshio SAITO; Akira KAWAZU

doi:10.1380/jsssj.11.495

STM Observation of (NH₄)₂S_x-treated GaAs (100) Surface

Masamichi YOSHIMURA, Ryu SHIOTA, Akihiko KUROKI, Norihiko ARA, Masami KAGESHIMA, Hidemi SHIGEKAWA, Haruhiro OIGAWA, Yasuo NANNICHI, Yoshio SAITO, Akira KAWAZU

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JOURNAL FREE ACCESS

1990 Volume 11 Issue 8 Pages 495-499

DOI https://doi.org/10.1380/jsssj.11.495

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Abstract

The surface structure of (NH₄)₂S_x-treated GaAs (100) was observed with a scanning tunneling microscope (STM) both in air and in vacuum. STM images obtained showed line shaped protrusions which run [110] direction and are 220 nm in width. For the sulfur treated n- and p-GaAs surfaces with 400°C-20 min heating, about 1 eV surface band bendings toward higher and lower binding energy side were observed, respectively. No band gap state appeared for either case.

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