Investigation of Semiconductor Surfaces Using Soft-X-ray Photoelectron Spectroscopy

Jiro MATSUO; Akira SATO; Noriaki NAKAYAMA

doi:10.1380/jsssj.12.110

Jiro MATSUO, Akira SATO, Noriaki NAKAYAMA

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JOURNAL FREE ACCESS

1991 Volume 12 Issue 2 Pages 110-114

DOI https://doi.org/10.1380/jsssj.12.110

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Published: March 20, 1991 Received: March 29, 1990 Available on J-STAGE: August 07, 2009 Accepted: March 29, 1990 Advance online publication: - Revised: -
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Date of correction: August 07, 2009 Reason for correction: - Correction: ABSTRACT Details: Wrong : A soft X-ray photoelectron spectroscopy with Zr Mζ radiation is used to investigate semiconductor surfaces. Zr Mζ photons of 151.4eV energy have good surface sensitivity, because Si2p photoelectron energy was about 50eV where the escape depth reaches minimum (0.5nm). The surface sensitivity was 10times higher than these in conventional techniques, and this result was in good agreement with that of theoretical calculation according to the difference of electron escape depth. Thanks to this high surface sensitivity, the Surface Core Level Shift (SCLS) was found to be -0.5eV in Si (100) 2×1 surface. We also used this technique to study the oxygen adsorbed surfaces layers at room temperature on Si (100) 2×1. The significant difference in photoelectron spectra was observed after annealing above 650°C.
Right : A soft X-ray photoelectron spectroscopy with Zr Mζ radiation is used to investigate semiconductor surfaces. Zr Mζ photons of 151.4eV energy have good surface sensitivity, because Si2p photoelectron energy was about 50eV where the escape depth reaches minimum (0.5nm). The surface sensitivity was 10times higher than these in conventional techniques, and this result was in good agreement with that of theoretical calculation according to the difference of electron escape depth. Thanks to this high surface sensitivity, the Surface Core Level Shift (SCLS) was found to be -0.5eV in Si (100) 2×1 surface. We also used this technique to study the oxygen adsorbed surfaces layers at room temperature on Si (100) 2×1. The significant difference in photoelectron spectra was observed after annealing above 650°C.

Date of correction: August 07, 2009 Reason for correction: - Correction: AUTHOR Details: [in Japanese]

Abstract

A soft X-ray photoelectron spectroscopy with Zr Mζ radiation is used to investigate semiconductor surfaces. Zr Mζ photons of 151.4eV energy have good surface sensitivity, because Si2p photoelectron energy was about 50eV where the escape depth reaches minimum (0.5nm). The surface sensitivity was 10times higher than these in conventional techniques, and this result was in good agreement with that of theoretical calculation according to the difference of electron escape depth. Thanks to this high surface sensitivity, the Surface Core Level Shift (SCLS) was found to be -0.5eV in Si (100) 2×1 surface. We also used this technique to study the oxygen adsorbed surfaces layers at room temperature on Si (100) 2×1. The significant difference in photoelectron spectra was observed after annealing above 650°C.

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