Initial Growth Stages of Ge on Si(111)

Yukinobu SHINOUA; Yoshihiro KOBAYASHI; Hiroki HIBINO; Kiyomasa SUGII

doi:10.1380/jsssj.14.105

Yukinobu SHINOUA, Yoshihiro KOBAYASHI, Hiroki HIBINO, Kiyomasa SUGII

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JOURNAL FREE ACCESS

1993 Volume 14 Issue 2 Pages 105-112

DOI https://doi.org/10.1380/jsssj.14.105

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Published: March 10, 1993 Received: October 13, 1992 Available on J-STAGE: August 07, 2009 Accepted: November 30, 1992 Advance online publication: - Revised: -
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Date of correction: August 07, 2009 Reason for correction: - Correction: CITATION Details: Wrong : 1) T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar and P. J. Mannaerts : Phys. Rev. Lett. 58, 729 (1987).
2) J. -P. Noël, N. L. Rowell, D. C. Houghton and D. D. Perovic : Appl. Phys. Lett. 57, 1037 (1990).
3) K. Shoji, M. Hyodo, H. Ueba and C. Tatsuyama : Jpn. J. Appl. Phys. 22, L 200 (1983).
4) K. Miki, H. Okumura, K. Sakamoto, H. Matuhara, T. Sakamoto and Y. Yoshida : J. Cryst. Growth 111, 902 (1991).
5) S. S. Iyer, R. R. Pukite, J. C. Tsang and M. W. Copel : J. Cryst. Growth 95, 439 (1989).
6) P. M. J. Marëe, K. Nakagawa, F. M. Mulders, W. M. Frenken and K. L. Kavanagh : Surf. Sci. 191, 305 (1987).
7) T. Narusawa and W. M. Gibson : Phys. Rev. Lett. 47, 1459 (1981).
8) T. Narusawa and W. M. Gibson : J. Vacuum Sci. Technol. 20, 709 (1982).
9) H. -J. Gossmann, L. C. Feldman and W. M. Gibson : Phys. Rev. Lett. 53, 294 (1984).
10) H. -J. Gossmann and L. C. Feldman : Surf. Sci. 155, 413 (1985).
11) H. -J. Gossmann and L. C. Feldman : Phys. Rev. B 32, 6 (1985).
12) Y. Shinoda, N. Shimizu, H. Hibino, T. Nishiokar C. Heimlich, Y. Kobayashi, S. Ishizawa, K. Sugii and M. Seki : Appl. Surf. Sci. 60/61, 112 (1992).
14) K. Kajiyama, Y. Tanishiro and K. Takayanagi Surf. Sci. 222, 38 (1989).
15) K. Kajiyama, Y. Tanishiro and K. Takayanagi : Surf. Sci. 222, 47 (1989).
16) D. W. Pashley, J. W. Menter and G. A. Basset : Nature 179, 752 (1957).
17) G. A. Basset, J. W. Menter and D. W. Pashley : Proc. Roy. Soc. A 246, 345 (1958).
18) A. Ishizaka and Y. Shiraki : J. Electrochem. Soc. 33, 666 (1986).
19) U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler : Surf. Sci. 248, 321 (1991).
20) E. R. Johnson and S. M. Christian : Phys. Rev. 95, 560 (1954).
21) M. Zinke-Allmang, L. C. Feldman, S. Nakahara and B. A. Davidson : Phys. Rev. B 39, 7848 (1989).
22) G. L. McVay and A. R. DuCharme : J. Appl. Phys. 44, 1409 (1973).
23) R. M. Burger and R. P. Donovan, Ed : “Fundamentals of Silicon Integrated Device Technology” 1, (Prentice-Hall Inc., Englewood Cliffs, New Jersey, 1967).
24) H. Poppa : J. Vac. Sci. Technol. 2, 42 (1965) .

Right : 1) T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar and P. J. Mannaerts : Phys. Rev. Lett. 58, 729 (1987).
2) J. -P. Noël, N. L. Rowell, D. C. Houghton and D. D. Perovic : Appl. Phys. Lett. 57, 1037 (1990).
3) K. Shoji, M. Hyodo, H. Ueba and C. Tatsuyama : Jpn. J. Appl. Phys. 22, L 200 (1983).
4) K. Miki, H. Okumura, K. Sakamoto, H. Matuhara, T. Sakamoto and Y. Yoshida : J. Cryst. Growth 111, 902 (1991).
5) S. S. Iyer, R. R. Pukite, J. C. Tsang and M. W. Copel : J. Cryst. Growth 95, 439 (1989).
6) P. M. J. Marëe, K. Nakagawa, F. M. Mulders, W. M. Frenken and K. L. Kavanagh : Surf. Sci. 191, 305 (1987).
7) T. Narusawa and W. M. Gibson : Phys. Rev. Lett. 47, 1459 (1981).
8) T. Narusawa and W. M. Gibson : J. Vacuum Sci. Technol. 20, 709 (1982).
9) H. -J. Gossmann, L. C. Feldman and W. M. Gibson : Phys. Rev. Lett. 53, 294 (1984).
10) H. -J. Gossmann and L. C. Feldman : Surf. Sci. 155, 413 (1985).
11) H. -J. Gossmann and L. C. Feldman : Phys. Rev. B 32, 6 (1985).
12) Y. Shinoda, N. Shimizu, H. Hibino, T. Nishiokar C. Heimlich, Y. Kobayashi, S. Ishizawa, K. Sugii and M. Seki : Appl. Surf. Sci. 60/61, 112 (1992).
14) K. Kajiyama, Y. Tanishiro and K. Takayanagi Surf. Sci. 222, 38 (1989).
15) K. Kajiyama, Y. Tanishiro and K. Takayanagi : Surf. Sci. 222, 47 (1989).
16) D. W. Pashley, J. W. Menter and G. A. Basset : Nature 179, 752 (1957).
17) G. A. Basset, J. W. Menter and D. W. Pashley : Proc. Roy. Soc. A 246, 345 (1958).
18) A. Ishizaka and Y. Shiraki : J. Electrochem. Soc. 33, 666 (1986).
19) U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler : Surf. Sci. 248, 321 (1991).
20) E. R. Johnson and S. M. Christian : Phys. Rev. 95, 560 (1954).
21) M. Zinke-Allmang, L. C. Feldman, S. Nakahara and B. A. Davidson : Phys. Rev. B 39, 7848 (1989).
22) G. L. McVay and A. R. DuCharme : J. Appl. Phys. 44, 1409 (1973).
23) R. M. Burger and R. P. Donovan, Ed : “Fundamentals of Silicon Integrated Device Technology” 1, (Prentice-Hall Inc., Englewood Cliffs, New Jersey, 1967).
24) H. Poppa : J. Vac. Sci. Technol. 2, 42 (1965) .

Abstract

Initial growth stages of Ge on Si (111) are studied from the viewpoint of intermixing of Si into the epitaxial Ge layer. Defect formation in the Ge islands was characterized by using moiré patterns taken by transmission electron microscopy (TEM). Ge islands are grown by MBE on Si(111) surfaces with an SPE-grown buffer layer, which is expected to prevent intermixing between the epitaxial Ge layer and the Si substrate. Anomalous Si incorporation into the Ge islands is analyzed by TEM moiré fringe analysis. Dislocations are visualized by means of extra 'half-lines' of the moiré fringes, and thus Burgers vectors are determined. Stacking faults are observed by a displacement of the fringe spacings Coalescence of the Ge islands and dislocation generation from the contact part of the islands are detected.

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