A CAICISS Study of to Sputter Cleaning and Modification of the GaAs(001) Surface

Neil B. CHILTON; Koki TANAKA

doi:10.1380/jsssj.16.458

Neil B. CHILTON, Koki TANAKA

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JOURNAL FREE ACCESS

1995 Volume 16 Issue 7 Pages 458-462

DOI https://doi.org/10.1380/jsssj.16.458

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Published: July 10, 1995 Received: February 20, 1995 Available on J-STAGE: August 07, 2009 Accepted: April 26, 1995 Advance online publication: - Revised: -
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Date of correction: August 07, 2009 Reason for correction: - Correction: ABSTRACT Details: Wrong : Co-Axial Impact Collision Ion Scattering Spectroscopy (CAICISS) was used to determine the change in elemental composition of the GaAs(001) surface at temperatures up to 420°C caused by low energy Ne ion bombardment at doses of up to 10¹⁷ atoms/cm². The as-received GaAs surface was shown to be Garich consistent with the presence of a gallium based natural oxide at the surface. At temperatures of up to 320°C, sputtering the surface to a dose of &sim;10^16< atoms cm^-2 resulted in a As/Ga surface composition ratio close to 1:1 indicative of sputter removal of the oxide layer. Annealing the as received wafer at 630°C in an attempt to remove the natural oxide layer was found to result in a near 100% Ga terminated surface, however, annealing the same sample after prior room temperature sputter removal of the natural oxide layer resulted in a slightly arsenic rich surface.
Right : Co-Axial Impact Collision Ion Scattering Spectroscopy (CAICISS) was used to determine the change in elemental composition of the GaAs(001) surface at temperatures up to 420°C caused by low energy Ne ion bombardment at doses of up to 10¹⁷ atoms/cm². The as-received GaAs surface was shown to be Garich consistent with the presence of a gallium based natural oxide at the surface. At temperatures of up to 320°C, sputtering the surface to a dose of ∼10^16< atoms cm^-2 resulted in a As/Ga surface composition ratio close to 1:1 indicative of sputter removal of the oxide layer. Annealing the as received wafer at 630°C in an attempt to remove the natural oxide layer was found to result in a near 100% Ga terminated surface, however, annealing the same sample after prior room temperature sputter removal of the natural oxide layer resulted in a slightly arsenic rich surface.

Abstract

Co-Axial Impact Collision Ion Scattering Spectroscopy (CAICISS) was used to determine the change in elemental composition of the GaAs(001) surface at temperatures up to 420°C caused by low energy Ne ion bombardment at doses of up to 10¹⁷ atoms/cm². The as-received GaAs surface was shown to be Garich consistent with the presence of a gallium based natural oxide at the surface. At temperatures of up to 320°C, sputtering the surface to a dose of ∼10^16< atoms cm^-2 resulted in a As/Ga surface composition ratio close to 1:1 indicative of sputter removal of the oxide layer. Annealing the as received wafer at 630°C in an attempt to remove the natural oxide layer was found to result in a near 100% Ga terminated surface, however, annealing the same sample after prior room temperature sputter removal of the natural oxide layer resulted in a slightly arsenic rich surface.

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