Identification of the Topmost Atomic Layer of 6H-SiC (0001) Surface by CAICISS

Abstract

The terminating structure of 6H-SiC (0001) fabricated by the Acheson method was directly identified by means of Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS). The CAICISS spectra proved that the topmost surfaces of samples were Si-terminated planes for both the front and the rear faces. Furthermore, according to the azimuthal dependence of Si peak in TOF spectra, it was also proved that the (0001) Si face was composed of the Si-terminated flat terraces and steps whose height is 7.56 Å corresponding to a half unit cell length of the c-axis of 6H-SiC.