Behavior of Ge δ-doped Layer in Si (001) Observed by TOF-LIEIES

Takashi SHIIZAKI; Takashi FUSE; Shigenori KUJIME; Kiyoshi KAWAMOTO; Mitsuhiro KATAYAMA; Kenjiro OURA

doi:10.1380/jsssj.18.394

Takashi SHIIZAKI, Takashi FUSE, Shigenori KUJIME, Kiyoshi KAWAMOTO, Mitsuhiro KATAYAMA, Kenjiro OURA

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JOURNAL FREE ACCESS

1997 Volume 18 Issue 7 Pages 394-398

DOI https://doi.org/10.1380/jsssj.18.394

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Published: July 10, 1997 Received: February 03, 1997 Available on J-STAGE: August 07, 2009 Accepted: - Advance online publication: - Revised: -
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Date of correction: August 07, 2009 Reason for correction: - Correction: TITLE Details: Wrong : Behavior of Ge δ-doped Layer in Si (001) Observed by TOF-LIEIES
Right : Behavior of Ge δ-doped Layer in Si (001) Observed by TOF-LIEIES

Date of correction: August 07, 2009 Reason for correction: - Correction: ABSTRACT Details: Wrong : We have investigated a Ge δ-doped layer in Si(001) formed by solid phase epitaxy (SPE) using time-of-flight low-ener-gy ion scattering spectroscopy (TOF-LEIS). The Ge δ-doped layer was formed by annealing a Si buffer layer deposited on a Ge(1ML)/Si(001) surface. We found that Ge atoms diffuse from the δ-doped layer around the interface as a result of SPE growth of the Si buffer layer. Incident angle dependence of Ge and Si intensities at various annealing temperatures showed that the Ge atoms began to occupy Si lattice sites above 300°C; indicating Ge-Si alloying near the interface region, and that the diffusion of Ge atoms was promoted above 500°C accompanied by the crystallization process of the Si buffer layer. The thickness of the Si₁-_xGe_x layer at 600°C was estimated to be about 30 Å, where the Si buffer layer was nearly perfectly crystallized.
Right : We have investigated a Ge δ-doped layer in Si(001) formed by solid phase epitaxy (SPE) using time-of-flight low-ener-gy ion scattering spectroscopy (TOF-LEIS). The Ge δ-doped layer was formed by annealing a Si buffer layer deposited on a Ge(1ML)/Si(001) surface. We found that Ge atoms diffuse from the δ-doped layer around the interface as a result of SPE growth of the Si buffer layer. Incident angle dependence of Ge and Si intensities at various annealing temperatures showed that the Ge atoms began to occupy Si lattice sites above 300°C; indicating Ge-Si alloying near the interface region, and that the diffusion of Ge atoms was promoted above 500°C accompanied by the crystallization process of the Si buffer layer. The thickness of the Si₁-_xGe_x layer at 600°C was estimated to be about 30 Å, where the Si buffer layer was nearly perfectly crystallized.

Abstract

We have investigated a Ge δ-doped layer in Si(001) formed by solid phase epitaxy (SPE) using time-of-flight low-ener-gy ion scattering spectroscopy (TOF-LEIS). The Ge δ-doped layer was formed by annealing a Si buffer layer deposited on a Ge(1ML)/Si(001) surface. We found that Ge atoms diffuse from the δ-doped layer around the interface as a result of SPE growth of the Si buffer layer. Incident angle dependence of Ge and Si intensities at various annealing temperatures showed that the Ge atoms began to occupy Si lattice sites above 300°C; indicating Ge-Si alloying near the interface region, and that the diffusion of Ge atoms was promoted above 500°C accompanied by the crystallization process of the Si buffer layer. The thickness of the Si₁-_xGe_x layer at 600°C was estimated to be about 30 Å, where the Si buffer layer was nearly perfectly crystallized.

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