Observation of Si(111) Surfaces Using Energy-analyzed Electrons

Mineharu SUZUKI; Kadena MOGI; Yoshikazu HOMMA

doi:10.1380/jsssj.19.48

Mineharu SUZUKI, Kadena MOGI, Yoshikazu HOMMA

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JOURNAL FREE ACCESS

1998 Volume 19 Issue 1 Pages 48-52

DOI https://doi.org/10.1380/jsssj.19.48

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Published: January 10, 1998 Received: July 02, 1997 Available on J-STAGE: August 07, 2009 Accepted: September 05, 1997 Advance online publication: - Revised: -
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Date of correction: August 07, 2009 Reason for correction: - Correction: CITATION Details: Wrong : 2) Y. Homma, M. Tomita and T. Hayashi: Surf. Sci. 258, 147 (1991).
4) Y. Homma, M. Suzuki and M. Tomita: Appl. Phys. Lett. 62, 3276 (1993).
5) T. Doi, M. Ichikawa and S. Hosoki: Jpn. J. Appl. Phys. 35, L 458 (1996).
6) A. Howie: J. Microscopy 180, 192 (1995).
8) M. Prutton, L.A. Larson and H. Poppa: J. Appl. Phys. 54, 374 (1983).
9) M.M. El Gomati, M. Prutton, B. Lamb and C.G. Tuppen: Surf. Interface Anal. 11, 251 (1988).
10) A. Umbach, A. Hoyer and W.H. Brünger: Surf. Interface Anal. 14, 401 (1989).
11) W. Hösler: Surf. Interface Anal. 17, 543 (1991).
12) M. Suzuki, K. Mogi, T. Ogino and S. Ichimura: J. Surface Anal. 3, 458 (1997).
13) M. Suzuki, Y. Homma, Y. Kudo and R. Kaneko: Ultramicroscopy 42-44, 940 (1992).
14) G.C. Smith: “Surface Analysis by Electron Spectroscopy Measurement and Interpretation” (Plenum Press, New York, 1994) Chapter 6.
16) CS. Fadley: J. Surface Analysis 3, 334 (1997).
17) S. Ichimura and A. Kurokawa: J. Surface Analysis 3, 328 (1997).

Right : 2) Y. Homma, M. Tomita and T. Hayashi: Surf. Sci. 258, 147 (1991).
4) Y. Homma, M. Suzuki and M. Tomita: Appl. Phys. Lett. 62, 3276 (1993).
5) T. Doi, M. Ichikawa and S. Hosoki: Jpn. J. Appl. Phys. 35, L 458 (1996).
6) A. Howie: J. Microscopy 180, 192 (1995).
8) M. Prutton, L.A. Larson and H. Poppa: J. Appl. Phys. 54, 374 (1983).
9) M.M. El Gomati, M. Prutton, B. Lamb and C.G. Tuppen: Surf. Interface Anal. 11, 251 (1988).
10) A. Umbach, A. Hoyer and W.H. Brünger: Surf. Interface Anal. 14, 401 (1989).
11) W. Hösler: Surf. Interface Anal. 17, 543 (1991).
12) M. Suzuki, K. Mogi, T. Ogino and S. Ichimura: J. Surface Anal. 3, 458 (1997).
13) M. Suzuki, Y. Homma, Y. Kudo and R. Kaneko: Ultramicroscopy 42-44, 940 (1992).
14) G.C. Smith: “Surface Analysis by Electron Spectroscopy Measurement and Interpretation” (Plenum Press, New York, 1994) Chapter 6.
16) CS. Fadley: J. Surface Analysis 3, 334 (1997).
17) S. Ichimura and A. Kurokawa: J. Surface Analysis 3, 328 (1997).

Abstract

A stepped Si(111) surface consisted of atomically flat terraces and step bands where atomic steps bunched was prepared by direct-current heating in UHV. An electron-emission spectrum, generated with a field-emission-type electron gun, was observed in situ with a scanning Auger microscope (SAM). The electron-emission spectrum obtained in the direct mode included only characteristic Auger electron (AE) peaks of silicon and a secondary-electron (SE) peak. The AE/SE spectrum obtained from the atomically flat Si(111) terrace between the steps was different from the spectra from sputtered clean silicon (111) and (100) surfaces as to the background shape and the relative intensities of the characteristic peaks. We also found that the stepped surface morphology could be imaged by using only the energy-analyzed SEs when the intensity was defined as the difference between the peak height and the background intensity.

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